K1117 Datasheet PDF – 600V, 6A, N-Ch, MOSFET – Toshiba

Part Number: K1117

Function: V dss = 600V, Id=6A, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Toshiba

Image:

K1117 datasheet

Description:

This is 600V, 6A, N-Channel Field Effect Transistor.

Features:

1. Drain Current : ID = 6.0A@ TC=25℃

2. Drain Source Voltage : VDSS = 600V(Min)

3. Static Drain-Source On-Resistance : Rds(on) = 0.95 Ω (max)

 

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = 600 V

3. Drain peak current : ID(pulse) = 6 A

4. Drain current: IDR = 24 A

5. Drain Power dissipation : Pd = 100 W

6. Channel temperature: Tch = 100 °C

7. Storage temperature: Tstg = -55 ~ +150 °C

 

Applications:

1. Silicon N-Channel MOS Type

2. High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive.

 

Other data sheets are available within the file: 2SK1117

K1117 Datasheet PDF Download

K1117 pdf

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