Part Number: K1118, 2SK1118
Function: 600V, 6A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Images:
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Description
This is Silicon N-Channel MOS filed effect transistor.
Features
1. Drain Current ID=6A@ TC=25℃
2. Drain Source Voltage- : VDSS= 600V(Min)
3. Fast Switching Speed
4. Minimum Lot-to-Lot variations for robust device performance and reliable operation
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain Power Dissipation: Pd = 6 A
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.