The Full Part Number is 2SK1118.
The function of this semiconductor is 600V, Silicon N Channel MOSFET.
The package is TO-220 Type
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
1 page
Description
The K1118 is 600V, Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
1. 4-Volt Gate Drive
2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )
3. High Forward Transfer Admittance
4. Low Leakage Current
5. Enhancement-Mode
Absolute Maximum Ratings ( Ta = 25°C )
1. Drain-Source Voltage : Vdss = 600V
2. Drain-Gate Voltage : Vdgr = 600V
3. Gate-Source Voltage : Vgss = ± 30V
4. Drain Current : Id =6 A
4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed, High Current DC-DC Converter
2. Relay Drive and Motor Drive
K1118 PDF Datasheet
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