K1118 Datasheet – N-Ch, 600V, 6A, MOSFET – 2SK1118

The Full Part Number is 2SK1118.

The function of this semiconductor is 600V, Silicon N Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K1118 datasheet image

Description:

The K1118 is 600V, Silicon N-Channel MOSFET.

Features:

1. 4-Volt Gate Drive

2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )

3. High Forward Transfer Admittance

4. Low Leakage Current

5. Enhancement-Mode

 

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-Source Voltage : Vdss = 600V

2. Drain-Gate Voltage : Vdgr = 600V

3. Gate-Source Voltage : Vgss = ± 30V

4. Drain Current : Id =6 A

4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

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2 page
K1118 pdf pinout

Applications:

1. High Speed, High Current DC-DC Converter

2. Relay Drive and Motor Drive

K1118 Datasheet

 

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