Part Number : K1165
Function : 12A, 450V, Silicon N-Channel MOSFET
Package : TO-3P Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 450 V
2. Gate to source voltage : VGSS = ±30 V
3. Drain current : ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Body to drain diode reverse drain current : IDR = 12 A
6. Channel dissipation : Pch = 100 W
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Applications
1. High speed power switching
Other data sheets within the file : 2SK1165, 2SK1166, K1166
K1165 Datasheet PDF Download
