K12A50D PDF Datasheet – 500V, N-Ch, MOSFET (TK12A50D)

Part Number : K12A50D, TK12A50D

Function : Silicon N-Channel MOSFET

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K12A50D datasheet pdf

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 364 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

K12A50D pinout

Applications

Switching Regulator

K12A50D Datasheet

K12A50D pdf