K12A600 PDF Datasheet – 600V, MOSFET ( TK12A60D )

Part Number : K12A60D, K12A600, TK12A60D

Function : Silicon N Channel MOSFET

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K12A600 pdf mosfet

Description :

1. Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Pinout
K12A600 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 359 mJ
6. Avalanche curren : Iar =  12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = °C
9. Storage temperature : Tstg = +150 °C

Applications

Switching Regulator

K12A60D Datasheet

K12A600 pdf