Part Number : K12A60D, TK12A60D
Function : Silicon N Channel MOS Type, Field Effect Transistor
Manufactures : Toshiba
Image :
Description :
Switching Regulator Applications
1. Low drain-source ON resistance: RDS (ON)= 0.45 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.5 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
4. Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
