K12A60U Datasheet PDF – 600V, N-Ch, MOSFET – Toshiba

Part Number : K12A60U, TK12A60U

Function : Silicon N Channel MOSFET

Package : TO-220SIS, SC-67 Type

Manufacturers : Toshiba

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K12A60U datasheet mosfet

Description

Switching Regulator Applications

1. Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.)
2. High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Pinouts :
K12A60U pinout
Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 35 W
5. Single pulse avalanche energy : EAS = 69 mJ
6. Avalanche current : IAR = 12 A
7. Repetitive avalanche energy : EAR = 3.5 mJ

 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Official Homepage : https://toshiba.semicon-storage.com/us/product/mosfet/detail.TK12A60U.html

K12A60U Datasheet PDF Download