Part Number: K1363
Function: 900V, 8A, N Channel MOSFET
Package: TO-3P Type
Manufacturer: Toshiba
Pinouts:
Description:
1. Low Drain-Source ON Resistance : Rds(on) = 1.1 Ohm ( Typ. )
2. High Forward Transfer Admittance : | yfs | = 4.0S ( Typ. )
3. Low Leakage Current : Idss = 300 uA (Max.) @ Vds = 720 V
4. Enhancement-Mode : Vth = 1.5 ~ 3.5 V @ Vds = 10V, Id = 1mA
Absolute Maximum Ratings
1. Drain-Source Voltage : Vdss = 900 V
2. Drain-Gage Voltage : Vdgr = 900 V
3. Gate-Source Voltage : Vgss = +- 30 V
4. Drain Current : Id = 8 A
5. Drain Power Dissipation: Pd = 90 W
Applications
1. High Speed, High Current Switching
Other data sheets are available within the file: 2SK1363
K1363 Datasheet PDF Download
