K13A600 Datasheet – 600V, MOSFET (Transistor)

This is Silicon N Channel MOSFET Transistor.

Part Number : K13A600, TK13A600

Correct Number : K13A60D, TK13A60D

Package : TO-220 Type

Manufacturers : Toshiba

Image :

K13A600 mosfet

Description :

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K13A600 Pinout

K13A600 datasheet pinout

Absolute Maximum Ratings ( Ta = 25º C )

1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation :  PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature : Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C

 

Electrical Characteristics

K13A600 Marking

Applications : Switching Regulator

K13A600 Datasheet

 

K13A600 pdf