This is Silicon N Channel MOSFET Transistor.
Part Number : K13A600, TK13A600
Correct Number : K13A60D, TK13A60D
Package : TO-220 Type
Manufacturers : Toshiba
Image :
Description :
1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K13A600 Pinout
Absolute Maximum Ratings ( Ta = 25º C )
1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation : PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature : Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C
Electrical Characteristics
Applications : Switching Regulator
K13A600 Datasheet
