K13A60D Datasheet – 600V, 13A, N-Ch, MOSFET – TK13A60D

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : K13A60D, TK13A60D

Function : 600V, 13A, Silicon N Channel MOSFET

Package : TO-220 Type

Manufacturers : Toshiba

Image :

K13A60D mosfet

Description :

This is 600V, 13A, Silicon N Channel MOS Type Field Effect Transistor.

Features :

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinouts :

K13A60D datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 13 A

4. Drain Power Dissipation : Pd = 50 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. Switching Regulator

 

Electrical Characteristics

K13A60D Marking

Other data sheets within the file :  TK13A60D

K13A60D Datasheet

 

K13A600 pdf

 

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