K13A60D Datasheet – Vdss=600V, N-Ch MOSFET – Toshiba

Part Number : K13A60D, TK13A60D

Function : Silicon N Channel MOSFET

Manufacturers : Toshiba

Image :

K13A60D mosfet

Description :

Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinouts :

K13A60D datasheet pinout

Absolute Maximum Ratings

1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation :  PD = 50 W

 

Electrical Characteristics

K13A60D Marking

 

K13A60D Datasheet

 

K13A60D pdf

Other data sheets within the file :  K13A60D, TK13A60D