Part Number: K13A65U, TK13A65U
Function: 650V, N Channel MOSFET
Package: TO 220, SC-67 type
Manufacturer: Toshiba Semiconductor
Images:
Description
This is 650V, 13A, N-Channel MOSFET.
Features
1. Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 650 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 40 W
4. Single pulse avalanche energy : EAS 86 mJ
5. Avalanche current : IAR = 13 A
6. Repetitive avalanche energy : EAR = 4.0 mJ
Applications:
1. Switching Regulator
