K14A55D Datasheet – Nch, Vdss=550V, MOSFET – Toshiba

Part Number : TK14A55D, Marking : K14A55D

Function : Silicon N Channel MOS FET

Manufacturers : Toshiba

Image

k14a55d-mosfet

 

Description :

Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k14a55d-datasheet-pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 550 V

2. Gate-source voltage : VGSS = ±30 V

3. Drain power dissipation (Tc = 25°C) : PD = 50 W

4. Single pulse avalanche energy : EAS = 521 mJ

5. Avalanche current : IAR = 14 A

 

K14A55D Datasheet