This post explains for the MOSFET K150E09NE.
The Part Number is TK150E09NE.
The Package is TO-220AB Type
The function of this transistor is Silicon N Channel MOS Type Transistor.
Manufacturers : Toshiba
Image
Description : Silicon N Channel MOS Type Field Effect Transistor
Features
1. Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)
2. Low leakage current : IDSS = 10 μA (max) (VDS = 85 V)
3. Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 85 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 150 A
4. Drain power dissipation : PD = 230 W
5. Single pulse avalanche energy : Eas = 161 mJ
6. Avalanche current : Ias = 72 A
7. Channel temperature : Tch = 175 °C
8. Storage temperature : Tstg = -55 to +175 °C
Other data sheets within the file : TK150E09NE
K150E09NE Datasheet
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