Part Number : K15A50D, TK15A50D
Function : Silicon N Channel MOSFET
Manufactures : Toshiba
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Description
1. Switching Regulator Applications
2. Low drain-source ON-resistance: RDS (ON)= 0.24 Ω(typ.)
3. High forward transfer admittance: |Yfs| = 7.0 S (typ.)
4. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
5. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Maxmimum Ratings ( Ta = 25’C )
1. Drain-source voltage : VDSS = 500 V
2. Drain power dissipation (Tc =25°C) : PD = 50 W
3. Single pulse avalanche energy : EAS = 542 mJ
4. Avalanche current : IAR = 15 A
5. Repetitive avalanche energy : EAR = 5.0 mJ
