K15A60U Datasheet – N-Ch, Vdss=600V, MOSFET – Toshiba

Part Number : K15A60U, TK15A60U

Function : Silicon N Channel MOS Type Field Effect Transistor

Package :  TO-220F, SC-67 Type

Manufactures : Toshiba

Image

k15a60u-mosfet-toshiba


Description

1. Switching Regulator Applications

2. Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)

3. High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

4. Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

5. Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k15a60u-datasheet-pdf

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS=600 V

2. Gate-source voltage : VGSS=±30 V

3. Drain power dissipation (Tc = 25°C) : PD=40 W

4. Single pulse avalanche energy : EAS=81 mJ

5. Avalanche current : IAR=15 A

6. Repetitive avalanche energy : EAR=4 mJ

 

 

K15A60U Datasheet