K16A60W Datasheet – 600V, N-Ch, MOSFET (Transistor)

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : K16A60W

Function : Silicon N-Channel MOSFET (Transistor)

Package : TO-220SIS Type

Manufactures : Toshiba Semiconductor

Images :

K16A60W transistor mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 15.8 A
4. Drain power dissipation : PD =  40 W
5. Single pulse avalanche energy : Eas = 231 mJ
6. Avalanche curren : Iar = 4 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C

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Applications

• Switching Voltage Regulators

 K16A60W Pinout

K16A60W pinout datasheet

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)

Other data sheets within the file : TK16A60W

K16A60W Datasheet