Part Number: K170
Function: -40V, 10mA, MOSFET
Package: TO-92 Type
Manufacturer: Toshiba
Image and Pinouts:
Description:
This is Silicon N Channel Junction Type Field Effect Transistor (TOSHIBA).
Features:
• Recommended for first stages of EQ and M.C. head amplifiers.
• High breakdown voltage: VGDS= −40 V
Absolute Maximum Ratings (Ta = 25°C)
1. Gate-Drain Voltage : VGDS = -40 V
2. Gate Current : IG = 10 mA
3. Drain Power Dissipation: Pd = 400 mW
4. Junction temperature : Tj = 125 °C
5. Storage temperature: Tstg = -55 to +125 °C
Applications:
1. Low Noise Audio Amplifier
K170 Datasheet PDF Download
Other data sheets are available within the file: 2SK170, K-170