Part Number : K1933
Function : 10A, 900V, Silicon N-Channel MOSFET
Package : TO-3P Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance
2. High speed switching
3. No secondary breakdown
4. Suitable for Switching regulator
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ±30 V
3. Drain current : ID = 10 A
4. Drain peak current : ID(pulse) = 30 A
5. Body to drain diode reverse drain current : IDR = 10 A
6. Channel dissipation : Pch = 150 W
Application
1. High speed power switching
Other data sheets within the file : 2SK1933
K1933 Datasheet PDF Download
