Part Number : K2225, 2SK2225
Function : Silicon N-Channel MOS FET
Package : TO-3PFM Type
Manufactures : Hitachi Semiconductor
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Description
High speed power switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 1500 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 2 A
4. Drain peak current : ID = 7 A
5. Body to drain diode reverse drain current : IDR = 2 A
6. Channel dissipation : Pch = 50 W
Pinout
Features
1. High breakdown voltage (VDSS = 1500 V)
2. High speed switching
3. Low drive current
4. No Secondary Breakdown
5. Suitable for Switching regulator, DC-DC converter
