Part Number : K2545
Function : 600V, Silicon N Channel MOSFET
Package : TO-220 Type
Manufacturers : Toshiba
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Description :
1. High Speed, High Voltage Switching
2. DC-DC Converter, Relay Drive and Motor Drive
Features
1. Low drain−source ON resistance : RDS (ON)= 0.9 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 5.5 S (typ.)
3. Low leakage current : IDSS= 100 µA (max) (VDS= 600 V)
4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)
Pinouts :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = 600 V
3. Drain current : ID = 6A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 345 mJ
6. Avalanche curren : Iar = 6 A
7. Repetitive avalanche energy : Ear = 4 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C
Other data sheets within the file : 2SK2545
K2545 Datasheet PDF Download
