K2607 PDF Datasheet – 800V, 9A, N-Ch, MOSFET – 2SK2607

This post explains for the N-Channel MOSFET.

The Part Number is K2607, 2SK2607.

The function of this semiconductor is 800V, 9A, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

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K2607 image

Description

2SK2607 is Silicon N Channel MOS Type Field Effect Transistor.

 

Applications:

1. Chopper Regulator

2. DC−DC Converter and Moter Drive

Features

1. Low drain−source ON-resistance : RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

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pinout

K2607 Datasheet