K2608 Datasheet – Vdss=900V, N-Ch MOSFET – Toshiba

Part Number : K2608, 2SK2608

Function : Silicon N Channel MOSFET

Package : TO-220AB Type

Manufactures : Toshiba

Image

K2608 mosfet

Description

Switching Regulator Applications

1. Low drain−source ON resistance  : RDS (ON)= 3.73 Ω(typ.)
2. High forward transfer admittance  : |Yfs|=2.6 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K2608 datasheet pinout

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS= 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 100 W
5. Single pulse avalanche energy : EAS = 295 mJ

 

K2608 Datasheet