Part Number : K2611, 2SK2611
Description : Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor
Manufactures : Toshiba
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Description
DC−DC Converter, Relay Drive and Motor Drive Applications
1. Low drain−source ON resistance : RDS (ON)= 1.1 Ω(typ.)
2. High forward transfer admittance : |Yfs| =7.0 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
