K2611 Datasheet – Vdss = 900V, N-Ch MOSFET – Toshiba

Part Number : K2611, 2SK2611

Description : Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor

Manufactures : Toshiba

Image
K2611 mosfet

Description

DC−DC Converter, Relay Drive and Motor Drive Applications

1. Low drain−source ON resistance  : RDS (ON)= 1.1 Ω(typ.)
2. High forward transfer admittance  : |Yfs| =7.0 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K2611 datasheet pdf pinout

K2611 Datasheet