This is one of the MOSFET types. This is a kind of the transistor.
Part Number : K2611
Function : Silicon N-Channel MOSFET
Package : TO-247
Manufacturers : WinSemi Microelectronics
Pinouts :
Description :
This N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
1. 11A, 900V, RDS(on) (Max1.10Ω) @VGS=10V
2. Ultra-low Gate charge (Typical 72nC)
3. Fast Switching Capability
4. 100% Avalanche Tested
5. Maximum Junction Temperature Range (150 ℃)
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Drain current : ID = 11 A
4. Drain power dissipation : PD = 300 W
5. Single pulse avalanche energy : Eas = 1000 mJ
6. Repetitive avalanche energy : Ear = 30 mJ
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Other data sheets within the file : 2SK2611
K2611 Datasheet PDF Download
