K2611 Datasheet – 900V, 11A, MOSFET (Transistor)

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : K2611

Function : Silicon N-Channel MOSFET

Package : TO-247

Manufacturers : WinSemi Microelectronics

Pinouts :

K2611 datasheet

 

Description :

This N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

1. 11A, 900V, RDS(on) (Max1.10Ω) @VGS=10V
2. Ultra-low Gate charge (Typical 72nC)
3. Fast Switching Capability
4. 100% Avalanche Tested
5. Maximum Junction Temperature Range (150 ℃)

 

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage : VDSS = 900 V
2. Drain current : ID = 11 A
4. Drain power dissipation : PD = 300 W
5. Single pulse avalanche energy : Eas = 1000 mJ
6. Repetitive avalanche energy : Ear = 30 mJ
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C

Other data sheets within the file : 2SK2611

K2611 Datasheet PDF Download

K2611 pdf