K2717 Datasheet – 900V, N-Ch, MOSFET – Toshiba

Part Number : K2717

Function : 900V, Silicon N Channel MOSFET

Package : TO-220 Type

Manufacturers : Toshiba

Image :

K2717 datasheet pdf

Description

1. Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 4.4 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K2717 pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current
(1) DC : ID = 5 A
(2) Pulse : IDP = 15A
5. Drain power dissipation (Tc = 25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 595 mJ
7. Avalanche current : IAR = 5 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C

Applications

DC−DC Converter and Motor Drive

 

K2717 Datasheet PDF

K2717 pdf

 

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