Part Number : K2718, 2SK2718
Description : Silicon N Channel MOSFET
Manufactures : Toshiba
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Description
DC−DC Converter and Motor Drive Applications
1. Low drain−source ON resistance : RDS (ON)= 5.6 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 2.0 S (typ.)
3. Low leakage current : IDSS= 100 µA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Maximum Ratings
1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS= 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 40 W
5. Single pulse avalanche energy : EAS = 216 mJ
