Part Number : K2718, 2SK2718
Function : 900V, 2.5A, N-Channel MOSFET
Package : TO-220NIS Type
Manufactures : Toshiba Semiconductor
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Description :
K2718 is Silicon N Channel MOS Type Field Effect Transistor.
Features :
1. Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 2.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Applications :
DC−DC Converter and Motor Drive
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 2.5A
4. Drain Power Dissipation : Pd = 40 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). […]
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