K2749 Datasheet – 900V, N-ch MOSFET – Toshiba

Part Number : K2749, 2SK2749

Function : Silicon N Channel MOSFET

Package : TO-3P, 2-16C1B Type

Manufactures : Toshiba

Images :

K2749 Datasheet mosfet

Features

1. Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)
2.High forward transfer admittance : |Yfs| = 5.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K2749 pinout

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 150 W
5. Single pulse avalanche energy : EAS = 682 mJ
6. Avalanche current : IAR = 7 A
7. Repetitive avalanche energy : EAR = 15 mJ

Applications

Chopper Regulator, DC−DC Converter and Motor Drive

 

K2749 Datasheet