Part Number : K2788
Function : Silicon N Channel MOSFET
Package : UPAK Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance : RDS(on)= 0.12Ω typ (V GS= 10 V, ID= 1 A)
2. Low drive current
3. High speed switching
4. 4V gate drive devices.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 2 A
4. Drain peak current : ID(pulse) = 4 A
5. Body to drain diode reverse drain current : IDR = 2 A
6. Channel dissipation : Pch = 1 W
Applications
1. High Speed Power Switching
Other data sheets within the file : 2SK2788
K2788 Datasheet PDF Download
