Part Number : K2847
Function : 900V, 8A, N-Channel MOSFET
Package : TO-3P Type
Manufacturers : Toshiba
Image :
Description :
This is 900V, 8A, Silicon N Channel MOS Type Field Effect Transistor.
Features :
1. Low drain−source ON resistance : RDS(ON) = 1.1 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinouts :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 8 A
4. Drain Power Dissipation : Pd = 85 W (Tc = 25°C)
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
1. DC-DC Converter and Motor Drive
Other data sheets within the file : 2SK2847
K2847 Datasheet PDF Download
