K2847 Datasheet PDF – 900V, 8A, N-Ch, MOSFET – Toshiba

Part Number : K2847

Function : 900V, 8A, N-Channel MOSFET

Package : TO-3P Type

Manufacturers : Toshiba

Image :

K2847 datasheet

Description :

This is 900V, 8A, Silicon N Channel MOS Type Field Effect Transistor.

Features :

1. Low drain−source ON resistance  : RDS(ON) = 1.1 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinouts :

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 8 A

4. Drain Power Dissipation : Pd = 85 W (Tc = 25°C)

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. DC-DC Converter and Motor Drive

 

Other data sheets within the file : 2SK2847

K2847 Datasheet PDF Download

K2847 pdf