Part Number: K2929
Function: 25A, 60V, N Channel MOSFET
Package: TO-220AB Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description
This is Silicon N Channel MOSFET.
Features
1. Low on-resistance : RDS=0.026 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 25 A
4. Drain peak current : ID(pulse) = 100 A
5. Body-drain diode reverse drain current : IDR = 25 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 34 mJ
8. Channel dissipation: Pch = 50 W
Application
1. High Speed Power Switching
Other data sheets are available within the file: 2SK2929
K2929 Datasheet PDF Download
