K2929 Datasheet PDF – 60V, 25A, N-Ch, MOSFET

Part Number : K2929

Function : 25A, 60V, Silicon N Channel MOSFET

Package : TO-220AB Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :

K2929 datasheet

 

Description :

1. Low on-resistance : RDS=0.026 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 25 A
4. Drain peak current : ID(pulse) = 100 A
5. Body-drain diode reverse drain current : IDR = 25 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 34 mJ
8. Channel dissipation : Pch  = 50 W

Application

1. High Speed Power Switching

Other data sheets within the file : 2SK2929

K2929 Datasheet PDF Download


K2929 pdf