Part Number : K2929
Function : 25A, 60V, Silicon N Channel MOSFET
Package : TO-220AB Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance : RDS=0.026 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 25 A
4. Drain peak current : ID(pulse) = 100 A
5. Body-drain diode reverse drain current : IDR = 25 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 34 mJ
8. Channel dissipation : Pch = 50 W
Application
1. High Speed Power Switching
Other data sheets within the file : 2SK2929
K2929 Datasheet PDF Download
