Part Number : K2956
Function : 50A, 30V, Silicon N Channel MOSFET
Package : TO–220CFM Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance : RDS(on)= 7mΩ typ.
2. 4V gate drive devices.
3. High speed switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body-drain diode reverse drain current : IDR = 50 A
6. Channel dissipation : Pch = 35 W
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets within the file : 2SK2956
K2956 Datasheet PDF Download
