Part Number : K2983
Function : MOS FIELD EFFECT TRANSISTOR
Package : TO-220AB
Manufacturers : NEC => Renesas Technology
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Description :
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
Features
1. Low on-resistance
RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A)
RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A)
2. Low Ciss Ciss= 1200 pF TYP.
3. Built-in gate protection diode
Absolute Maximum Ratings
1. Drain to Source Voltage : VDSS = 30 V
2. Gate to Source Voltage : VGSS = ±20 V
3. Drain Current (DC) : ID(DC) = ±30 A
4. Drain Current (pulse) : ID(pulse) = ±120 A
5. Total Power Dissipation (TA = 25°C) : PT = 1.5 W
Applications
SWITCHINGN-CHANNEL POWER MOS FET INDUSTRIAL USE
Other data sheets within the file : 2SK2983 TO-220AB, 2SK2983-S TO-262, 2SK2983-ZJ TO-263
K2983 Datasheet PDF Download
