K2996 Transistor – N-Ch, MOSFET (Transistor)

Part Number : K2996

Function : TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Package : TO-220 Type

Manufacturers : Toshiba

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K2996 transistor

Description :

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K2996 Transistor Pinout

K2996 datasheet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = 600 V
3. Drain current : ID = ± 10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 252 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

 

Applications

1. DC-DC Converter

2. Relay Drive and Motor Drive

Other data sheets within the file : 2SK2996

K2996 Datasheet PDF Download


K2996 pdf