Part Number : K2996
Function : 10A, 600V, Silicon N Channel MOS Type Field Effect Transistor
Package : TO-220F ( 600V , 10A , 45W , 0.74 ohm )
Manufacturers : Toshiba
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Description :
1. Low drain−source ON resistance : RDS(ON) = 0.74 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 6.8 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current ( DC ) : ID 10 A
5. Drain power dissipation (Tc = 25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 252 mJ
7. Avalanche current : IAR = 10 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 ~ 150 °C
Pinouts
Applications
1. DC−DC Converter
2. Relay Drive and Motor Drive
Marking Information
Other data sheets within the file : 2SK2996
K2996 Datasheet PDF Download
