K2996 Datasheet PDF – 600V, 10A, N Channel MOSFET – Toshiba

Part Number : K2996

Function : Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Package : TO-220F ( 600V , 10A , 45W , 0.74 ohm )

Manufacturers : Toshiba

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K2996 datasheet

 

Description :

DC−DC Converter, Relay Drive and Motor Drive Applications

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

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K2996 Datasheet PDF Download

K2996 pdf

 

Other data sheets within the file : 2SK2996