K2996 Datasheet PDF – 600V, 10A, N Channel MOSFET – Toshiba

Part Number : K2996

Function : 10A, 600V, Silicon N Channel MOS Type Field Effect Transistor

Package : TO-220F ( 600V , 10A , 45W , 0.74 ohm )

Manufacturers : Toshiba

Image

K2996 image

Description :

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current ( DC ) : ID 10 A
5. Drain power dissipation (Tc = 25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 252 mJ
7. Avalanche current : IAR = 10 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 ~ 150 °C

Pinouts
K2996 datasheet

Applications

1. DC−DC Converter
2. Relay Drive and Motor Drive

Marking Information

K2996 image

Other data sheets within the file : 2SK2996

K2996 Datasheet PDF Download

K2996 pdf