This is one of the MOSFET types.
This post explains for the transistor K2996.
The package is TO-220 type.
The function of this transistor is N-Channel MOSFET.
Manufacturer: Toshiba Semiconductor
Image
Description
This is 600V, 10A, N-Chnnal MOSFET.
Features
1. Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 6.8 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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K2996 datasheet
Applications
1. DC-DC Converter
2. Relay Drive and Motor Drive
K2996 PDF Datasheet
