Part Number: K30A06J3A
Function: 60V, Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
This is TOSHIBA Field Effect Transistor. Silicon N Channel MOS Type (U−MOSⅢ).
Switching Regulator Applications
Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 30 90 25 40 30 2.5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 5.0 °C / W 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 μH, RG = 25 Ω, IAR = 30 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.Handle with care. 1 2 3 1 2009-09-29 Electrical Characteristics (Ta = 25°C) TK30A06J3A Characteristics Symbol Test Condition Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn−on time Fall time Turn−off time IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 15 A VGS = 10V, ID = 15A VDS = 10 V, ID = 15 A VDS = 10 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 4.7 Ω ID = 15 A VOUT 2.0 Ω VDD ≈ 30 V toff Duty ≤ 1%, tw = 10 μs Total gate charge (Gate−source plus gate−drain) Gate source charge Gate−drain (“miller”) charge Qg Qgs VDD ≈ 48 V, VGS = 10 […]