K30N60HS Datasheet PDF – 600V, 30A, MOSFET, Transistor

Part Number: SKW30N60HS

Marking : K30N60HS

Function: 600V, 30A, High Speed IGBT

Package: TO-247-3 Type

Manufacturer: Infineon Technologies

Pinouts:

K30N60HS datasheet

Description

This is 600V, 30A, High Speed IGBT in NPT-technology.

The IGBT is insulated-gate bipolar transistor.

Image:

components

Features

• 30% lower Eoffcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:
(1) Parallel switching capability
(2) Moderate Eoffincrease with temperature
(3) Very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications
Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 41 A

4. Collector dissipation : Ptot = 250 W

5. Junction temperature : Tj = 150 °C (Tc = 25°C)

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Other data sheets are available within the file: SKW30N60HS

 

K30N60HS Datasheet PDF Download


K30N60HS pdf

Related articles across the web