K30N60HS Datasheet – 600V/30A IGBT – Infineon

This post explains for the semiconductor K30N60HS.

The Part Number is K30N60HS.

The function of this semiconductor is SKW30N60HS.

Manufacturers : Infineon

Preview images :

1 page
K30N60HS image

Description :

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff Tj Marking Package SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitte […]

2 page

K30N60HS Datasheet