Part Number: K3115, 2SK3115
Function: 600V, 6A, N-channel Power MOSFET
Package: TO-220 Type
Manufacturer: NEC
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Description
The K3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.
Features
1. Low gate charge : QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
2. Gate voltage rating ±30 V
3. Low on-state resistance : RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
4. Avalanche capability ratings
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Total Power Dissipation: Pd = 2 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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