K3151 Datasheet PDF – 100V, 50A, N-Ch, MOSFET

Part Number : K3151

Function : 50A, 100V, Silicon N Channel MOSFET

Package : TO-3P Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :

K3151 datasheet

 

Description :

1. Low on-resistance : RDS (on)= 11.5 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 100 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
4. Body-drain diode reverse drain current : IDR = 50 A
5. Avalanche current : IAP = 50 A
6. Avalanche energy : EAR = 250 mJ
7. Channel dissipation : Pch = 125 W
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets within the file : 2SK3151

K3151 Datasheet PDF Download


K3151 pdf