K3152 Datasheet PDF – 120V, 10A, N-Ch, MOSFET – Hitachi

Part Number : K3152

Function : 10A, 120V, Silicon N Channel MOSFET

Package : TO–220FM Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :

K3152 datasheet

 

Description :

1. Low on-resistance RDS= 100 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 120 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 10 A
4. Drain peak current : ID(pulse) = 40 A
5. Body-drain diode reverse drain current : IDR = 10 A
6. Avalanche current : IAP = 10 A
7. Avalanche energy : EAR = 8.5 mJ
8. Channel dissipation : Pch = 25 W

Applications

1. High Speed Power Switching

Other data sheets within the file : 2SK3152

K3152 Datasheet PDF Download


K3152 pdf