Part Number : K3155
Function : 15A, 150V, Silicon N Channel MOSFET
Pakcage : TO-220FM Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance : RDS= 100 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 150 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 15 A
4. Drain peak current : ID(pulse) = 60 A
5. Body-drain diode reverse drain current : IDR = 15 A
6. Avalanche current : IAP = 15 A
7. Avalanche energy : EAR = 16 mJ
8. Channel dissipation : Pch = 30 W
Application
1. High Speed Power Switching
Other data sheets within the file : 2SK3155
K3155 Datasheet PDF Download
