Part Number: K3157
Function: 20A, 150V, Silicon N Channel MOSFET
Package: TO-220FM Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description:
This is N-channel MOSFET.
Features:
1. Low on-resistance RDS= 50 mΩ typ.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 150 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 20 A
4. Drain peak current : ID(pulse) = 80 A
5. Body-drain diode reverse drain current : IDR = 20 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 30 mJ
8. Channel dissipation: Pch = 35 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature: Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets are available within the file: 2SK3157
K3157 Datasheet PDF Download
