Part Number : K3157
Function : 20A, 150V, Silicon N Channel MOSFET
Package : TO-220FM Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance RDS= 50 mΩ typ.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 150 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 20 A
4. Drain peak current : ID(pulse) = 80 A
5. Body-drain diode reverse drain current : IDR = 20 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 30 mJ
8. Channel dissipation: Pch = 35 W
9. Channel temperature : Tch = 150 °C
10. Storage temperature : Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets within the file : 2SK3157
K3157 Datasheet PDF Download
