Part Number : K3158
Function : Silicon N Channel MOS FET (High Speed Power Switching)
Package : TO-220AB Type
Manufacturers : Renesas Electronics
Pinouts :
Description :
1. Low on-resistance RDS=40mΩ typ.
2. High speed switching
3. 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 150 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 30 A
4. Drain peak current : ID(pulse) = 120 A
5. Body-drain diode reverse drain current : IDR = 30 A
6. Avalanche current : IAP = 30 A
7. Avalanche energy : EAR = 67 mJ
8. Channel dissipation : Pch = 100 W
9. Channel temperature : Tch = 150 °C
10. Storage temperature : Tstg = –55 to +150 °C
Other data sheets within the file : 2SK3158, 2SK3158-E
K3158 Datasheet PDF Download
