K3296 Datasheet – 20V, 35A, N-Ch Power MOSFET – NEC

Part Number : K3296, 2SK3296

Function : 35A, 20V, N-Channel MOS FIELD EFFECT TRANSISTOR

Package : TO-220AB, TO-263 Type

Manufacturers : NEC ( Renesas Technology )

Pinouts :
K3296 datasheet

Description :

The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. 4.5 V drive available
2. Low on-state resistance : RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)
3. Low gate charge : QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
4. Built-in gate protection diode
5. Surface mount device available

K3296 circuit

Absolute maximum ratings

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 20 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±35 A
4. Drain Current (Pulse) : ID(pulse) = ±140 A
5. Total Power Dissipation (TA = 25°C) : PT1 = 1.5 W
6. Total Power Dissipation (TC = 25°C) : PT2 = 40 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : 2SK3296, 2SK3296-S, 2SK3296-ZJ, 2SK3296-ZK

K3296 Datasheet PDF Download


K3296 pdf