This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3561, 2SK3561
Function: N-Channel MOSFET ( Vdss, Vdgr = 500V, Pd = 40W )
Package: TO 220 Type
Manufacturer: Toshiba
Image:
Description:
This is 500V, 8A, Silicon N-Channel MOS Type Field Effect Transistor.
Features for K3561 :
1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)
2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinouts:
Absolute Maximum Ratings ( Ta = 25°C )
1. Drain-source voltage: VDSS = 500 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current (DC): Id = 8A
5. Drain power dissipation (Tc = 25°C): PD = 40 W
6. Single pulse avalanche energy : EAS = 312 mJ
7. Avalanche current : Iar = 8 A
Applications:
1. Switching Regulator
