K3561 PDF – 500V, N-Ch MOSFET – 2SK3561 – Toshiba

K3561 is Silicon N Channel MOS Field Effect Transistor. Full Part Number is  2SK3561.

The package is TO-220 type.

Manufacturers of product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

Images :

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K3561 datasheet image

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K3561 pdf pinout

Description :

Switching Regulator Applications ( Id = 8A, Idp = 32A )

1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)
2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings ( Ta = 25’C )

1. Drain-source voltage : VDSS = 500 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 500 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current (DC) : Id = 8A
5. Drain power dissipation (Tc = 25°C) : PD = 40 W

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K3561 PDF Datasheet