This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3562, 2SK3562
Function: Vdss = 600V, 6A, N-channel MOSFET
Pacakge : TO-220 Type
Manufacturer: Toshiba
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Description
This is 600V, 6A, Silicon N-Channel MOS Type Transistor.
Features
1. Low drain-source ON resistance: RDS (ON)= 0.9Ω(typ.)
2. High forward transfer admittance: |Yfs| = 5.0S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = 600 V
3. Drain current: ID = 6 A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 345 mJ
6. Avalanche curren : Iar = 6 A
7. Repetitive avalanche energy : Ear = 4 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
